| 1. | More often, all of the materials exposed to the etchant have a finite etch rate .
通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。 |
| 2. | A study on etch rate of dry technique for hgcdte irfpas
焦平面探测阵列干法技术的刻蚀速率研究 |
| 3. | Temperature influence on etching rate of si deep trench using icp with sf6 o
刻蚀硅深槽基片温度对刻蚀速率的影响 |
| 4. | Influence of process parameters on the etching rate in inductively coupled plasma etcher
等离子体刻蚀中工艺参数对刻蚀速率影响的研究 |
| 5. | Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium - dioxid coating ; optical method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第2部 |
| 6. | Testing of materials for semiconductor technology - determination of etch rates of etching mixtures - part 3 : aluminium , gravimetric method
半导体技术试验.蚀刻混合剂浸蚀率测定.第3部分:铝.测 |
| 7. | Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium monocrystals ; gravimetric method
半导体工艺材料的检验.蚀刻混合剂浸蚀率的测定.第1部 |
| 8. | The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
结果表明非晶碳膜对于氧离子体具有高的抗刻蚀性，其刻蚀率不仅与刻蚀的过程参量有关，而且决定于膜的沉积条件。 |
| 9. | Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable
电极腐蚀法是指在激光腐蚀的过程中,通过外加电压在溶液中形成腐蚀电流,促使中间离子产物脱离基片表面,使腐蚀持续稳定进行。 |
| 10. | To find out the effective slurry with suitable type of oxidizer and concentration , chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x - ray spectrum
采用化学腐蚀实验方法研究抛光液中氧化剂种类和浓度以及抛光液ph值对钽酸锂晶片化学去除的影响。 |
